Composite spacer enabling uniform doping in recessed fin devices

ABSTRACT

A semiconductor device that includes at least one fin structure and a gate structure present on a channel portion of the fin structure. An epitaxial semiconductor material is present on at least one of a source region portion and a drain region portion on the fin structure. The epitaxial semiconductor material includes a first portion having a substantially conformal thickness on a lower portion of the fin structure sidewall and a second portion having a substantially diamond shape that is present on an upper surface of the source portion and drain portion of the fin structure. A spacer present on first portion of the epitaxial semiconductor material.

BACKGROUND

Technical Field

The present disclosure relates to semiconductor devices, and moreparticularly to semiconductor devices including fin structures.

Description of the Related Art

With the continuing trend towards miniaturization of integrated circuits(ICs), there is a need for transistors to have higher drive currentswith increasingly smaller dimensions. The use of non-planarsemiconductor devices such as, for example, silicon fin field effecttransistors (FinFETs) may be the next step in the evolution ofcomplementary metal oxide semiconductor (CMOS) devices.

SUMMARY

In one embodiment, a method of forming a semiconductor device isprovided that includes forming an inner spacer layer on source and drainportions of a fin structure and a gate structure that is present on thechannel portion of the fin structure. An outer spacer layer is depositedon the inner spacer layer. An first etch process removes a portion ofthe outer spacer layer to expose a portion of the inner spacer layerthat is present on an upper surface of the source and drain portions ofthe fin structure, wherein a remaining portion of the outer spacer layeris present overlying sidewalls of the lower surface of the source anddrain portions of the fin structure. The inner spacer layer is removedselectively to the remaining portion of the outer spacer layer toexposed said sidewalls of the lower surface of the source and drainportions of the fin structure. Doped epitaxial semiconductor material isformed on the lower surface of the source and drain portions of the finstructures.

In another embodiment, a method of forming a semiconductor device isprovided that includes forming a conformal inner spacer layer on sourceand drain portions of a fin structure and a gate structure that ispresent on the channel portion of the fin structure. A conformal outerspacer layer is deposited on the conformal inner spacer layer. An firstetch process removes a portion of the outer layer to expose a portion ofthe inner spacer layer that is present on an upper surface of the sourceand drain portions of the fin structure, wherein a remaining portion ofthe outer spacer layer is present overlying sidewalls of the lowersurface of the source and drain portions of the fin structure. The innerspacer layer is removed selectively to the remaining portion of theouter spacer layer to exposed said sidewalls of the lower surface of thesource and drain portions of the fin structure. Doped epitaxialsemiconductor material on the source and drain portions of the finstructures, wherein a first portion of the doped epitaxial semiconductormaterial is formed on the lower surface of the source and drain portionsof the fin structures, and a second portion of the doped epitaxialsemiconductor material has a substantially diamond shape and is formedon an upper surface of the source and drain portions of the finstructures.

In another aspect, a semiconductor device is provided that includes atleast one fin structures, and a gate structure present on a channelportion of the fin structure. An epitaxial semiconductor material ispresent on at least one of a source region portion and a drain regionportion on the fin structure, wherein the epitaxial semiconductormaterial includes a first portion having a substantially conformalthickness on a lower portion of the fin structure sidewall and a secondportion having a substantially diamond shape that is present on an uppersurface of said at least one of the source portion and drain portion ofthe fin structures. A spacer present on first portion of the epitaxialsemiconductor material.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

The disclosure will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 is a perspective view depicting forming a gate structure on thechannel region of a plurality of fin structures, in accordance with oneembodiment of the present disclosure.

FIG. 2 is a perspective view depicting forming an inner spacer layer onsource and drain portions of a fin structure and a gate structure thatis present on the channel portion of the fin structure, in accordancewith one embodiment of the present disclosure.

FIG. 3 is a perspective view depicting forming an outer spacer layer onthe inner spacer layer, in accordance with one embodiment of the presentdisclosure.

FIG. 4 is a perspective view depicting a first etch process to remove aportion of the outer layer to expose a portion of the inner spacer layerthat is present on an upper surface of the source and drain portions ofthe fin structure, wherein a remaining portion of the outer spacer layeris present overlying sidewalls of the lower surface of the source anddrain portions of the fin structure, in accordance with one embodimentof the present disclosure.

FIG. 5 is a perspective view depicting removing the inner spacer layerselectively to the remaining portion of the outer spacer layer toexposed said sidewalls of the lower surface of the source and drainportions of the fin structure, in accordance with one embodiment of thepresent disclosure.

FIG. 6 is a perspective view depicting forming doped epitaxialsemiconductor material on the lower surface of the source and drainportions of the fin structures, in accordance with one embodiment of thepresent disclosure.

FIG. 7 is a perspective view of a Fin type Field Effect Transistor(FinFET) including source and drain portions having epitaxialsemiconductor material that includes a first portion having asubstantially conformal thickness on a lower portion of the finstructure sidewall and a second portion having a substantially diamondshape that is present on an upper surface of the fin structure sidewall,in accordance with one embodiment of the present disclosure.

DETAILED DESCRIPTION

Detailed embodiments of the claimed methods, structures and computerproducts are disclosed herein; however, it is to be understood that thedisclosed embodiments are merely illustrative of the claimed structuresand methods that may be embodied in various forms. In addition, each ofthe examples given in connection with the various embodiments areintended to be illustrative, and not restrictive. Further, the figuresare not necessarily to scale, some features may be exaggerated to showdetails of particular components. Therefore, specific structural andfunctional details disclosed herein are not to be interpreted aslimiting, but merely as a representative basis for teaching one skilledin the art to variously employ the methods and structures of the presentdisclosure.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present principles, as well as other variations thereof, means thata particular feature, structure, characteristic, and so forth describedin connection with the embodiment is included in at least one embodimentof the present principles. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment. For purposes of thedescription hereinafter, the terms “upper”, “over”, “overlying”,“lower”, “under”, “underlying”, “right”, “left”, “vertical”,“horizontal”, “top”, “bottom”, and derivatives thereof shall relate tothe embodiments of the disclosure, as it is oriented in the drawingfigures. The term “positioned on” means that a first element, such as afirst structure, is present on a second element, such as a secondstructure, wherein intervening elements, such as an interface structure,e.g. interface layer, may be present between the first element and thesecond element. The term “direct contact” means that a first element,such as a first structure, and a second element, such as a secondstructure, are connected without any intermediary conducting, insulatingor semiconductor layers at the interface of the two elements.

The structures and methods that are disclosed herein provide a methodfor uniformly doping recessed fin structures, as used in fin-type fieldeffect transistor (FinFET) semiconductor devices. As used herein, theterm “fin structure” refers to a semiconductor material, which can beemployed as the body of a semiconductor device, in which the gatestructure is positioned around the fin structure such that charge flowsdown the channel on the two sidewalls of the fin structure andoptionally along the top surface of the fin structure. A field effecttransistor (FET) is a semiconductor device in which output current,i.e., source-drain current, is controlled by the voltage applied to agate structure to the channel of a semiconductor device. A finFET is asemiconductor device that positions the channel region of thesemiconductor device in a fin structure. As used herein, the term“drain” means a doped region in semiconductor device located at the endof the channel region, in which carriers are flowing out of thetransistor through the drain. The term “source” is a doped region in thesemiconductor device, in which majority carriers are flowing into thechannel region. The source and drain regions of a finFET are typicallyformed on source and drain portions of the fin structures that are onopposing sides of the portion of the fin structure containing thechannel region. In some examples, epitaxial semiconductor materialprovides portions of the source and drains regions of the FinFET, inwhich the epitaxial semiconductor material is formed on a portion of thesource and drain portions of the fin structure.

As the fin height increases for high performance, it can be advantageousfor spacer confined source and drain epitaxial material having anun-merged diamond like shape. For FinFETs formed on semiconductor oninsulator (SOI) substrates, it has been determined that when employingepitaxial semiconductor material on an upper portion of the source anddrain portions of the fin structures without doping a lower portion ofthe fin structures disadvantageously degrades the junction resistance ofthe device, i.e., results in a high junction resistance. Prior attemptsto overcome this disadvantage include doping via ion implantation thelower portion of the fin structures prior to epitaxial growth, whichresults in high leakage effects due to dopant diffusion. The methods andstructures disclosed herein employ a composite spacer to facilitatesubstantially uniform doping in recessed fin device, which in someembodiments can provide a performance benefit for FinFETs including tallfin heights. Further details regarding the method and structures of thepresent disclosure are now described with reference to FIGS. 1-7.

FIG. 1 depicts one embodiment of forming a gate structure 15 on thechannel region of a plurality of fin structures 10. The semiconductormaterial that provides the fin structures 10 may be a semiconductingmaterial including, but not limited to silicon, strained silicon, asilicon carbon alloy (e.g., silicon doped with carbon (Si:C), silicongermanium, a silicon germanium and carbon alloy (e.g., silicon germaniumdoped with carbon (SiGe:C), silicon alloys, germanium, germanium alloys,gallium arsenic, indium arsenic, indium phosphide, as well as otherIII/V and II/VI compound semiconductors. The plurality of fin structures10 may be formed from a semiconductor on insulator (SOI) substrate, or abulk semiconductor substrate, using deposition photolithography and etchprocesses. In some embodiments, in which the fin structures 10 areformed from an SOI substrate, the fin structures 10 are formed from theSOI layer, i.e., the semiconductor layer that is present on the buriedoxide (BOX) layer 4. In this example, the BOX layer 4 provides forisolation between adjacent fin structures 10, and the base semiconductorsubstrate 3, i.e., the semiconductor layer on the opposite face of theBOX layer 4 as the SOI layer, provides mechanical support.

In one embodiment, the patterning process used to define each of the finstructures 10 is a sidewall image transfer (SIT) process. The SITprocess can include forming a mandrel material layer (not shown) on thematerial layer that provides the fin structures 10, such as the SOIlayer of an SOI substrate, or the bulk semiconductor substrate uppersurface. The mandrel material layer can include any material(semiconductor, dielectric or conductive) that can be selectivelyremoved from the structure during a subsequently performed etchingprocess. In one embodiment, the mandrel material layer may be composedof amorphous silicon or polysilicon. In another embodiment, the mandrelmaterial layer may be composed of a metal, such as, e.g., aluminum (Al),tungsten (W), or copper (Cu). The mandrel material layer can be formedby a deposition method, such as chemical vapor deposition or plasmaenhanced chemical vapor deposition. In one embodiment, the thickness ofthe mandrel material layer can be from 50 nm to 300 nm. Followingdeposition of the mandrel material layer, the mandrel material layer canbe patterned by lithography and etching to form a plurality of mandrelstructures on the topmost surface of the semiconductor containingmaterial that provides the fin structures 10, e.g., the SOI layer of anSOI substrate.

In some embodiments, the SIT process may continue by forming adielectric spacer on each sidewall of each mandrel structure. Thedielectric spacer can be formed by deposition of a dielectric spacermaterial, and then etching the deposited dielectric spacer material. Thedielectric spacer material may comprise any dielectric spacer materialsuch as, for example, silicon dioxide, silicon nitride or a dielectricmetal oxide. Examples of deposition processes that can be used inproviding the dielectric spacer material include, but are not limitedto, chemical vapor deposition (CVD), plasma enhanced chemical vapordeposition (PECVD), or atomic layer deposition (ALD). Examples ofetching that be used in providing the dielectric spacers include anyetching process such as, e.g., reactive ion etching (RIE). Since thedielectric spacers are used in the SIT process as an etch mask, thewidth of the each dielectric spacer determines the width of each finstructure 10.

In some embodiments, after formation of the dielectric spacers, the SITprocess continues by removing each mandrel structure. Each mandrelstructure can be removed by an etching process that is selective forremoving the mandrel material as compared to silicon. Following themandrel structure removal, the SIT process continues by transferring thepattern provided by the dielectric spacers into the semiconductormaterial layer that provides the fin structures 10, such as the SOIlayer of an SOI substrate. The pattern transfer may be achieved byutilizing at least one etching process that can include dry etching,such as reactive ion etching (RIE), plasma etching, ion beam etching orlaser ablation, chemical wet etch processes or a combination thereof. Inone example, the etch process used to transfer the pattern may includeone or more reactive ion etching (RIE) steps. The etching steps patternthe semiconductor material layer to provide the fin structures 10.Following etching, i.e., pattern transfer, the SIT process may concludewith removing the dielectric spacers using an etch process or aplanarization process.

It is noted that the aforementioned spacer image transfer (SIT) processis only one method of forming the fin structures 10. In anotherembodiment, each of the fin structures 10 may be formed using aphotoresist etch mask. Specifically, in one example, a photoresist maskis formed overlying the semiconductor composition layer which providesthe fin structures 10. The exposed portions of the semiconductor layerthat provides the fin structures 10 that are not protected by thephotoresist mask are removed using a selective etch process. To providethe photoresist mask, a photoresist layer is first positioned on thesemiconductor layer that provides the fin structure 10, e.g., SOI layerof an SOI substrate or upper surface of bulk semiconductor substrate.The photoresist layer may be provided by a blanket layer of photoresistmaterial that is formed utilizing a deposition process such as, e.g.,plasma enhanced CVD (PECVD), evaporation or spin-on coating.

The blanket layer of photoresist material is then patterned to providethe photoresist mask utilizing a lithographic process that may includeexposing the photoresist material to a pattern of radiation anddeveloping the exposed photoresist material utilizing a resistdeveloper. Following the formation of the photoresist mask, an etchingprocess may remove the unprotected portions of the semiconductor layerthat provides the fin structures 10. The etch process may be ananisotropic process, such as reactive ion etch (RIE).

Each of the fin structures 10 may have a height H₁ ranging from 5 nm to200 nm. In another embodiment, each of the fin structures 10 has aheight H₁ ranging from 10 nm to 100 nm. In one example, each of the finstructures 10 has a height H₁ ranging from 20 nm to 50 nm. Each of theplurality of fin structures 10 may have a width W₁ of less than 20 nm.In another embodiment, each of the fin structures 10 has a width W₁ranging from 3 nm to 8 nm. Although two fin structures 10 are depictedin FIG. 1, the present disclosure is not limited to only this example.It is noted that any number of fin structures 10 may be formed from theSOI substrate. The pitch P1 separating adjacent fin structures 10 mayrange from 35 nm to 45 nm. In another example, the pitch P1 separatingadjacent fin structures 10 may range from 30 nm to 40 nm.

FIG. 1 further depicts forming a gate structure 15 on the channelportion of the fin structures 10. The “gate structure” functions toswitch the semiconductor device from an “on” to “off” state, and viceversa. The gates structure 15 is formed on the channel region of the finstructures 10. The gate structure 15 typically includes at least a gatedielectric 13 that is present on the channel region of the fin structure10, and a gate electrode 14 that is present on the gate dielectric 13.In one embodiment, the at least one gate dielectric layer 13 includes,but is not limited to, an oxide, nitride, oxynitride and/or silicatesincluding metal silicates, aluminates, titanates and nitrides. In oneexample, when the at least one gate dielectric layer 13 is comprised ofan oxide, the oxide may be selected from the group including, but notlimited to, SiO₂, HfO₂, ZrO₂, Al₂O₃, TiO₂, La₂O₃, SrTiO₃, LaA₁O₃, Y₂O₃and mixture thereof. The physical thickness of the at least one gatedielectric layer 13 may vary, but typically, the at least one gatedielectric layer 13 has a thickness from 1 nm to 10 nm. In anotherembodiment, the at least one gate dielectric layer 13 has a thicknessfrom 1 nm to 3 nm.

The conductive material of the gate electrode 14 may comprisepolysilicon, SiGe, a silicide, a metal or a metal-silicon-nitride suchas Ta—Si—N. Examples of metals that can be used as the gate electrode 14include, but are not limited to, Al, W, Cu, and Ti or other likeconductive metals. The layer of conductive material for the gateelectrode 14 may be doped or undoped. If doped, an in-situ dopingdeposition process may be employed. Alternatively, a doped conductivematerial can be formed by deposition, ion implantation and annealing.

The gate structure 15 may be formed by using a deposition method, suchas a chemical vapor deposition method and/or a physical vapor deposition(PVD), to deposit the material layers for the at least one gatedielectric layer and the at least one gate electrode followed byphotolithography and etch processing. In some embodiments, a hardmask 16may be formed on the upper surface of the material layer for the gateelectrode 14 as part of the photolithography and etch processing used todefine the geometry of the gate structure 15. The hardmask 16 may becomposed of a nitride, oxide, or oxynitride material.

FIG. 2 depicts one embodiment of forming an inner spacer layer 20 (alsoreferred to as first spacer layer) on source and drain portions of thefin structure 10, and forming the inner spacer layer 20 on the gatestructure 15 that is present on the channel portion of the fin structure10. The inner spacer layer 20 may be blanket deposited atop thestructure depicted in FIG. 1, including being formed over the exposedportions of the upper surface of the substrate, i.e., exposed surfacesof the BOX layer 4. The inner spacer layer 20 may be a conformal layer(also referred to as a conformally deposited layer). The term“conformal” denotes a layer having a thickness that does not deviatefrom greater than or less than 30% of an average value for the thicknessof the layer. The inner spacer layer 20 may be composed of anydielectric material, such as an oxide containing dielectric, e.g.,silicon oxide (SiO₂); a nitrogen containing dielectric, e.g., siliconnitride; or a combination thereof, such as silicon oxynitride. It isnoted that the above compositions for the inner spacer layer 20 areprovided for illustrative purposes only, and are not intended to limitthe present disclosure.

The inner spacer layer 20 may be deposited using a conformal dielectricprocess. For example, the inner spacer layer 20 may be conformallydeposited using chemical vapor deposition (CVD). Variations of CVDprocesses suitable for forming the first dielectric layer include, butare not limited to, Atmospheric Pressure CVD (APCVD), Low Pressure CVD(LPCVD) and Plasma Enhanced CVD (PECVD), Metal-Organic CVD (MOCVD) andcombinations thereof may also be employed. In one embodiment, thethickness of the inner spacer layer 20 may ranges from 1 nm to 10 nm. Inanother embodiment, the thickness of the inner spacer layer 20 may rangefrom 3 nm to 5 nm. In one preferred embodiment, the inner spacer layer20 is composed of silicon oxide (SiO₂) having a thickness ranging from 3nm to 5 nm.

FIG. 3 depicts forming an outer spacer layer 25 on the inner spacerlayer 20. Similar to the inner spacer layer 20, the outer spacer layer25 may be a conformally deposited layer. The outer spacer layer 25 istypically blanked deposited on the inner spacer layer 20. The outerspacer layer 25 is typically composed of a dielectric material that canbe etched selectively to the inner spacer layer 20. The compositions forinner spacer layer 20 and the outer spacer layer 25 are typicallyselected to provide for selective etching with respect to one anotherduring the following described process sequence. As used herein, theterm “selective” in reference to a material removal process denotes thatthe rate of material removal for a first material is greater than therate of removal for at least another material of the structure to whichthe material removal process is being applied. For example, in oneembodiment, a selective etch may include an etch chemistry that removesa first material selectively to a second material by a ratio of 10:1 orgreater, e.g., 100:1 or greater, or 1000:1 or greater.

In some embodiments, the outer spacer layer 25 is typically composed ofa low-k dielectric material. A low-k dielectric material may have adielectric constant that is less than 4.0, e.g., 3.9. In one embodiment,the low-k material that provides the outer spacer layer 25 may have adielectric constant ranging from 1.0 to 3.5. In another embodiment, thelow-k material that provides the outer spacer layer 25 may have adielectric constant ranging from 1.75 to 3.2.

Examples of materials suitable for the low-k materials for the outerspacer layer 25 may include silicon carbon boron nitride (SiCBN),silicon oxycarbonitride (SiOCN), fluorine doped silicon dioxide, carbondoped silicon dioxide, porous silicon dioxide, porous carbon dopedsilicon dioxide, organosilicate glass (OSG), diamond-like carbon (DLC)and combinations thereof. In some embodiments, the outer spacer layer 20may be conformally deposited using chemical vapor deposition (CVD).Variations of CVD processes suitable for forming the first dielectriclayer include, but are not limited to, Atmospheric Pressure CVD (APCVD),Low Pressure CVD (LPCVD) and Plasma Enhanced CVD (PECVD), Metal-OrganicCVD (MOCVD) and combinations thereof may also be employed. In otherembodiments, the outer spacer layer 25 may be composed of a low-kdielectric material that can include spin-on organic polymericdielectrics (e.g., SILK™), spin-on silicone based polymeric dielectric(e.g., hydrogen silsesquioxane (HSQ) and methylsilsesquioxane (MSQ), andcombinations thereof.

In some embodiments, the outer spacer layer 25 is deposited to athickness greater than the inner spacer layer 20. For example, in someembodiments, the outer spacer layer 25 may have a thickness ranging from5 nm to 30 nm. In another embodiment, the outer spacer layer 25 may havea thickness ranging from 7 nm to 15 nm. In one example, the outer spacerlayer 25 is composed of silicon carbon boron nitride (SiCBN) or siliconoxycarbonitride (SiOCN) having a thickness of approximately 10 nm, e.g.,9 nm.

It is noted that the above examples of the material compositions for theouter spacer layer 25 and the inner spacer layer 20 are provided forillustrative purposes only, and are not intended to limit the presentdisclosure. For example, the material compositions for the outer spacerlayer 25 and the inner spacer layer 20 may also be selected from hafniumoxide, hafnium silicon oxide, hafnium silicon oxynitride, lanthanumoxide, lanthanum aluminum oxide, zirconium oxide, zirconium siliconoxide, zirconium silicon oxynitride, tantalum oxide, titanium oxide,barium strontium titanium oxide, barium titanium oxide, strontiumtitanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalumoxide, lead zinc niobate, nitrided hafnium silicate (HfSiON), lanthanumoxide (La₃O₂), lanthanum aluminate (LaAlO₃), zirconium silicate(ZrSiO_(x)) and combinations thereof, so long as the materialcombinations selected provide for etch selectivity in accordance withthe following described process flow.

FIG. 4 depicts a first etch process to remove a portion of the outerspacer layer 25 to expose a portion of the inner spacer layer 20 that ispresent on an upper surface of the source and drain portions of the finstructure 10. In some embodiments, a remaining portion of the outerspacer layer 25 is present overlying sidewalls of the lower surface ofthe source and drain portions of the fin structure 10. In someembodiments, the first etch process includes an anisotropic etch. Theterm “anisotropic etch process” denotes a material removal process inwhich the etch rate in the direction normal to the surface to be etchedis greater than in the direction parallel to the surface to be etched.The anisotropic etch may include reactive-ion etching (RIE). Otherexamples of anisotropic etching that can be used at this point of thepresent disclosure include ion beam etching, plasma etching or laserablation.

In some embodiments, the first etch process for removing the outersemiconductor layer 25 may be selected to the inner semiconductor layer20. In some embodiments, the etch process for etching the outer spacerlayer 25 is a timed etch or employs end point detection to determinewhen the etch process is to be terminated. In the embodiment that isdepicted in FIG. 2, the etch process may continue until the portions ofthe outer spacer layer 25 is removed from the upper surface of the finstructure to expose the portion of the inner spacer 20 that is presenton the upper surfaces, i.e., sidewall and top surface, of the source anddrain portions of the fin structure 10. The first etch process may alsoremove the portion of the outer spacer layer 25 from the upper surfaceof the gate structure 15, in which a portion of the outer spacer layer25 remains on the sidewall surface of the gate structure 15, as depictedin FIG. 4. The outer spacer layer 25 may provide a portion of a gatesidewall spacer.

In some embodiments, the remaining portion of the outer spacer layer 25that is present on the inner spacer layer 20 that is present on thesidewalls of the source and drain portions of the fin structure 10 maybe present on the lower ¾ of the height of the fin structure. In anotherembodiment, the remaining portion of the outer spacer layer 25 that ispresent on the inner spacer layer 20 that is present on the sidewalls ofthe source and drain portions of the fin structure 10 may be present onthe lower ½ of the height of the fin structure. In yet anotherembodiment, the remaining portion of the outer spacer layer 25 that ispresent on the inner spacer layer 20 that is present on the sidewalls ofthe source and drain portions of the fin structure 10 may be present onthe lower ½ of the height of the fin structure 10.

FIG. 5 depicts removing the inner spacer layer 20 selectively to theremaining portion of the outer spacer layer 25 to exposed said sidewallsS1 of the lower surface of the source and drain portions of the finstructure 10. The inner spacer layer 20 may be removed by a second etchprocess, which may also be an anisotropic etch, such as reactive ionetch, laser etching or anisotropic plasma etching. In other embodiments,the inner spacer layer 20 may be removed by an etch process that isisotropic. By isotropic it is meant that the etch process isnon-directional. In one embodiment, the isotropic etch that removes theinner spacer layer 20 may be plasma etch or wet chemical etch.

In some embodiments, removing the inner spacer layer 20 forms a trenchbetween the sidewall of the fin structure 10 and the remaining portionof the outer spacer layer 25 that is present on the sidewalls of thesource and drain region portions of the fin structure 10. In someembodiments, removing the inner spacer layer 20 may also recess aportion of the source and drain region portions of the fin structure 10.It is noted that recessing the upper surface of the fin structure 10 isoptional, and may be omitted.

In one embodiments, in which the inner spacer layer 20 is composed ofsilicon oxide (SiO₂) and the outer spacer layer 25 is composed ofsilicon carbon boron nitride (SiCBN) or silicon oxycarbonitride (SiOCN),the etch process for removing the inner spacer layer 20 selectively tothe remaining portion of the outer spacer layer 25 may include abuffered HF (BHF) composition. In some embodiments, BHF is a wet etchantthat is a mixture of a buffering agent, such as ammonium fluoride (NH₄F)and hydrofluoric acid (HF). The inner spacer layer 20 may also beremoved by RIE.

FIG. 6 depicts forming doped epitaxial semiconductor material 30 on thelower surface of the source and drain portions of the fin structures 10.The term “epitaxial semiconductor material” denotes a semiconductormaterial that has been formed using an epitaxial deposition or growthprocess. “Epitaxial growth and/or deposition” means the growth of asemiconductor material on a deposition surface of a semiconductormaterial, in which the semiconductor material being grown hassubstantially the same crystalline characteristics as the semiconductormaterial of the deposition surface. In some embodiments, when thechemical reactants are controlled and the system parameters setcorrectly, the depositing atoms arrive at the deposition surface withsufficient energy to move around on the surface and orient themselves tothe crystal arrangement of the atoms of the deposition surface. Thus, insome examples, an epitaxial film deposited on a {100} crystal surfacewill take on a {100} orientation.

The epitaxial material 30 formed on the fin structures of Fin FieldEffect Transistors (FinFET) may provide a component of the source anddrain regions of the FinFET. In this example, the epitaxialsemiconductor material 30 may be formed on the source and drain regionportions of the fin structures 10, which are on opposing sides of thechannel portion of the fin structure 10 that the gate structure 15 ispresent on.

In some embodiments, the epitaxial semiconductor material 30 is formedon the sidewalls Si of the lower portion of the fin structures 10filling the trench that is formed by removing the inner spacer layer 20,and the epitaxial semiconductor material 20 is formed on the upperportion, i.e., upper surface, of the fin structures 10.

The epitaxial semiconductor material 30 is typically epitaxiallygrown/deposited. In some embodiments, epitaxial deposition of theundoped epitaxial semiconductor material 30 is a selective depositionprocess. For example, although the epitaxial semiconductor material 30a, 30 b orientates to the crystal arrangement of a semiconductormaterial and is deposited thereon, such as the exposed sidewall surfacesSi and upper surfaces of the fin structures 10, the epitaxialsemiconductor material 30 may not be directly deposited on a dielectricmaterial, such as the outer sidewall layer 25.

The epitaxial semiconductor material 30 is initially deposited onexposed semiconductor surfaces of the fin structures 10, and grows fromthose surfaces with increasing deposition time. The deposition time isselected so that the epitaxial semiconductor material 30 that is formedon adjacent fin structures 10 does not merge, as depicted in FIG. 6.Epitaxial semiconductor material 30 that is formed on adjacent finstructure and remains separate, i.e., not merged, may be referred to as“non-merged epitaxial semiconductor material 30.

In some embodiments, the epitaxial semiconductor material 30 may becomposed of silicon (Si), germanium (Ge), silicon germanium (SiGe),silicon doped with carbon (Si:C) or the epitaxial semiconductor material30 may be composed of a type III-V compound semiconductor, such asgallium arsenide (GaAs). For example, when the semiconductor device,e.g., FinFETs, being formed are p-type and the fin structures 10, 10 arecomposed of silicon (Si), the source and drain regions may be doped to ap-type conductivity, and the material of the epitaxial semiconductormaterial 30 may be a germanium containing material, such as silicongermanium (SiGe). In other examples, when the semiconductor device,e.g., FinFETs, being formed are n-type and the fin structures 10 arecomposed of silicon (Si), the source and drain regions may be doped toan n-type conductivity, and the material of the epitaxial semiconductormaterial 30 may be silicon (Si) or silicon doped with carbon (Si:C).

In one embodiment, a number of different sources may be used for theepitaxial deposition of the epitaxial semiconductor material 30 a, 30 b.Examples of silicon including source gasses may include silane,disilane, trisilane, tetrasilane, hexachlorodisilane, tetrachlorosilane,dichlorosilane, trichlorosilane, methylsilane, dimethylsilane,ethylsilane, methyldisilane, dimethyldisilane, hexamethyldisilane andcombinations thereof. Examples of germanium including source gasses forepitaxially forming an undoped epitaxial semiconductor material 6 a, 6 bof a germanium containing semiconductor include germane, digermane,halogermane, dichlorogermane, trichlorogermane, tetrachlorogermane andcombinations thereof.

Epitaxial deposition may be carried out in a chemical vapor depositionapparatus, such as a metal organic chemical vapor deposition (MOCVD)apparatus or a plasma enhanced chemical vapor deposition (PECVD)apparatus. The temperature for epitaxial deposition typically rangesfrom 550° C. to 900° C. Although higher temperature typically results infaster deposition, the faster deposition may result in crystal defectsand film cracking. In one embodiment, the thickness of epitaxialsemiconductor material 30 may range from 10 nm to 100 nm In anotherembodiment, the thickness of epitaxial semiconductor material 30 mayrange from 40 nm to 60 nm.

The epitaxial semiconductor material 30 may be in situ doped to a p-typeor n-type conductivity. The term “in situ” denotes that a dopant, e.g.,n-type or p-type dopant, is introduced to the base semiconductormaterial, e.g., silicon or silicon germanium, during the formation ofthe base material. For example, an in situ doped epitaxial semiconductormaterial may introduce n-type or p-type dopants to the material beingformed during the epitaxial deposition process that includes n-type orp-type source gasses.

In the embodiments in which the finFET device being formed has n-typesource and drain regions, and is referred to as an n-type finFET, thedoped epitaxial semiconductor material 30 is doped with an n-type dopantto have an n-type conductivity. In the embodiments in which the finFETdevice being formed has p-type source and drain regions, and is referredto as a p-type finFET, the doped epitaxial semiconductor material 30 isdoped with a p-type dopant to have a p-type conductivity. As usedherein, “p-type” refers to the addition of impurities to an intrinsicsemiconductor that creates deficiencies of valence electrons. In a typeIV semiconductor, such as silicon, examples of p-type dopants, i.e.,impurities, include but are not limited to, boron, aluminum, gallium andindium. As used herein, “n-type” refers to the addition of impuritiesthat contributes free electrons to an intrinsic semiconductor. In a typeIV semiconductor, such as silicon, examples of n-type dopants, i.e.,impurities, include but are not limited to antimony, arsenic andphosphorous.

In one embodiment, the n-type gas dopant source may include arsine(AsH₃), phosphine (PH₃) and alkylphosphines, such as with the empiricalformula R_(x)PH_((3-x)), where R=methyl, ethyl, propyl or butyl and x=1,2 or 3. Alkylphosphines include trimethylphosphine ((CH₃)₃P),dimethylphosphine ((CH₃)₂PH), triethylphosphine ((CH₃CH₂)₃P) anddiethylphosphine ((CH₃CH₂)₂PH). The p-type gas dopant source may includediborane (B₂H₆).

In some embodiments, the n-type or p-type dopant may be present in thedoped epitaxial semiconductor material 30 in a concentration rangingfrom 1×10¹⁷ to 1×10²¹ atoms/cm³. In another embodiment, the n-type orp-type dopant may be present in the doped epitaxial semiconductormaterial 30 in a concentration ranging from 1×10¹⁸ to 1×10²⁰ atoms/cm³.

In some embodiments, the doped epitaxial semiconductor material 30 onthe source and drain portions of the fin structures 10 includes a firstportion formed on the lower surface, sidewall S1, of the source anddrain portions of the fin structures that is substantially conformal inwidth W2. In one embodiment, the width W2 of the first portion of thedoped epitaxial semiconductor material 30 may range from 1 nm to 10 nm.In another embodiment, the width W2 of the first portion of the dopedepitaxial semiconductor material 30 ranges from 3 nm to 5 nm. A secondportion of the doped epitaxial semiconductor material 30 can have asubstantially diamond shape and is formed on an upper surface of thesource and drain portions of the fin structures 10. The second portionof the epitaxial semiconductor material 30 having the substantiallydiamond shape may increase in width from the upper surface of the finstructures to its maximum width W3. The maximum width W2 of the secondportion of the epitaxial semiconductor material 30 having thesubstantially diamond shape may range from 5 nm to 50 nm. In someembodiments, the maximum width W2 of the second portion of the epitaxialsemiconductor material 30 having the substantially diamond shape mayrange from 10 nm to 30 nm. The upper portion of the diamond shape forthe second portion of the doped epitaxial semiconductor material 30decreases in width until reaching an apex that is substantiallycentrally positioned over a center of a width W1 of the source and drainportions of the fin structure 10. It is noted that the above dimensionsfor the widths of the first and second portions of the epitaxialsemiconductor material 30 have been provided for illustrative purposesonly, and are not intended to limit the present disclosure solelythereto.

In one embodiment, dopant from the doped epitaxial semiconductormaterial 30 is diffused into the fin structures 5 to form extensiondopant regions. In some embodiments, the diffusion, i.e., driving, ofthe dopant from the doped epitaxial semiconductor material 30 into theextension region portions of the fin structures 10 comprises thermalannealing. In one embodiment, the thermal annealing that diffuses thedopant from the doped epitaxial semiconductor material 30 into theextension region portions of the fin structures 10 includes an annealingprocess selected from the group consisting of rapid thermal annealing(RTA), flash lamp annealing, furnace annealing, laser annealing andcombinations thereof. In one embodiment, the thermal annealing fordriving the dopant, i.e., p-type or n-type dopant, from doped epitaxialsemiconductor material 30 into the extension region portions of the finstructures 10 may include a temperature ranging from 800° C. to 1200°C., and a time period ranging from 10 milliseconds to 100 seconds.

In some embodiments, because the epitaxial semiconductor material 30extends along an entirety of the sidewall Si of the source and drainportions of the fin structures 10, the dopant that is diffused from theepitaxial semiconductor material 30 into the fin structure 10 isdiffused in a relatively uniform manner throughout the entire height ofthe source and drain portions of the fin structures 10. This removes thenon-doped region at the lower half of fin structure that results fromprior methods that do not include the composite spacer and epitaxialsemiconductor material of the present disclosure. For example, thedopant for the source and drain region of the FinFET, e.g., n-type orp-type dopant, that is diffused into the source and drain regionportions of the fin structure may be present in a concentration rangingfrom 1×10¹⁷ to 1×10²¹ atoms/cm³. In another embodiment, the n-type orp-type dopant may be present in the source and drain region portions ofthe fin structure 10 in a concentration ranging from 1×10¹⁸ to 9×10²⁰atoms/cm³. In some embodiments, the dopant concentration at the base ofthe source and drain portions of the fin structure 10, which interfaceswith the supporting substrate 3, is substantially the same as the dopantconcentration at the upper surface of the source and drain portions ofthe fin structure 10 with an variation of less than 2×.

FIG. 7 depicts one embodiment of Fin type Field Effect Transistor(FinFET) 100 including source and drain portions having epitaxialsemiconductor material 30 that includes a first portion having asubstantially conformal thickness on a lower portion of the finstructure sidewall and a second portion having a substantially diamondshape that is present on an upper surface of the fin structure sidewall.In FIG. 7 only one of the source and drain region are depicted as theopposite of the depicted source or drain region is present on theopposite side of the gate structure 15 obstructed from being viewed fromthe view presented in FIG. 7.

It is noted that the above process sequence describes a gate firstprocess sequence for forming FinFETs. The present disclosure is notlimited to only gate first processing. For example, gate last, which isalso referred to as replacement gate processing, is also suitable foruse with the methods and structures of the present disclosure. A gatelast process can include forming a replacement gate structure on thechannel portion of the fin structures, forming a spacer on the sidewallof the replacement gate structure, forming source and drain regions onopposing sides of the replacement gate structure, removing thereplacement gate structure, and forming a functional gate structure inthe space once occupied by the replacement gate structure. Thereplacement gate structure can include sacrificial material that definesthe geometry of a later formed functional gate structure that functionsto switch the semiconductor device from an “on” to “off” state, and viceversa. A process sequence employing a replacement gate structure may bereferred to as a “gate last” process sequence. Both gate first and gatelast process sequences are applicable to the present disclosure.

The methods and structures that have been described above with referenceto FIGS. 1-7 may be employed in any electrical device includingintegrated circuit chips. The integrated circuit chips including thedisclosed structures and formed using the disclosed methods may beintegrated with other chips, discrete circuit elements, and/or othersignal processing devices as part of either (a) an intermediate product,such as a motherboard, or (b) an end product. The end product can be anyproduct that includes integrated circuit chips, including computerproducts or devices having a display, a keyboard or other input device,and a central processor.

Having described preferred embodiments of a methods and structuresdisclosed herein, it is noted that modifications and variations can bemade by persons skilled in the art in light of the above teachings. Itis therefore to be understood that changes may be made in the particularembodiments disclosed which are within the scope of the invention asoutlined by the appended claims. Having thus described aspects of theinvention, with the details and particularity required by the patentlaws, what is claimed and desired protected by Letters Patent is setforth in the appended claims.

What is claimed is:
 1. A semiconductor device comprising; at least onefin structure; a gate structure present on a channel portion of the atleast one fin structure; an epitaxial semiconductor material is presenton at least one of a source region portion and a drain region portion ofthe at least one fin structure, wherein the epitaxial semiconductormaterial includes a first portion having a substantially conformalthickness on a lower portion of the fin structure sidewall and a secondportion having a substantially diamond shape that is present on an uppersurface of said at least one of the source portion and drain portion ofthe fin structures; and a spacer present on first portion of theepitaxial semiconductor material.
 2. The semiconductor device of claim1, wherein the epitaxial semiconductor material in non-merged epitaxialsemiconductor material.
 3. The semiconductor device of claim 1, whereinthe epitaxial semiconductor material is doped with an n-type or p-typedopant.
 4. The semiconductor device of claim 3, wherein the n-type orp-type dopant from the epitaxial semiconductor material is diffused intothe source and drain portions of the fin structures, and is present in auniform concentration along an entire height of the source and drainportions of the fin structure.
 5. The semiconductor device of claim 2,wherein the spacer is present on half a height of the fin structure orless.
 6. The semiconductor device of claim 2, wherein the spacercomprises a low-k dielectric material.
 7. The semiconductor device ofclaim 4, wherein the uniform concentration of said p-type or n-typedopant along the entire height of the source and drain portions of thefin structure is present in a concentration ranging from 1×10¹⁹atoms/cm³ to 1×10¹⁹ atoms/cm³.
 8. A semiconductor device comprising; atleast one fin structure; a gate structure present on a channel portionof the at least one fin structure; an epitaxial semiconductor materialis present on at least one of a source region portion and a drain regionportion of the at least one fin structure, wherein the epitaxialsemiconductor material includes a first portion having a substantiallyconformal thickness on a lower portion of the fin structure sidewall anda second portion having a substantially diamond shape that is present onan upper surface of said at least one of the source portion and drainportion of the fin structures; and a spacer present on first portion ofthe epitaxial semiconductor material, wherein the spacer is present onhalf a height of the fin structure or less.
 9. The semiconductor deviceof claim 8, wherein the epitaxial semiconductor material in non-mergedepitaxial semiconductor material.
 10. The semiconductor device of claim8, wherein the epitaxial semiconductor material is doped with an n-typeor p-type dopant.
 11. The semiconductor device of claim 10, wherein then-type or p-type dopant from the epitaxial semiconductor material isdiffused into the source and drain portions of the fin structures, andis present in a uniform concentration along an entire height of thesource and drain portions of the fin structure.
 12. The semiconductordevice of claim 9, wherein the spacer comprises a low-k dielectricmaterial.
 13. The semiconductor device of claim 11, wherein the uniformconcentration of said p-type or n-type dopant along the entire height ofthe source and drain portions of the fin structure is present in aconcentration ranging from 1×10¹⁹ atoms/cm³ to 1×10¹⁹ atoms/cm³.
 14. Asemiconductor device comprising; at least one fin structure; a gatestructure present on a channel portion of the at least one finstructure; an epitaxial semiconductor material is present on at leastone of a source region portion and a drain region portion of the atleast one fin structure, wherein the epitaxial semiconductor materialincludes a first portion having a substantially conformal thickness on alower portion of the fin structure sidewall and a second portion havinga substantially diamond shape that is present on an upper surface ofsaid at least one of the source portion and drain portion of the finstructures, the epitaxial semiconductor material having a conductivitytype dopant that is uniform in concentration; and a spacer present onfirst portion of the epitaxial semiconductor material.
 15. Thesemiconductor device of claim 14, wherein the epitaxial semiconductormaterial in non-merged epitaxial semiconductor material.
 16. Thesemiconductor device of claim 14, wherein the conductivity type dopantis an n-type or p-type dopant.
 17. The semiconductor device of claim 16,wherein the n-type or p-type dopant from the epitaxial semiconductormaterial is diffused into the source and drain portions of the finstructures, and is present in a uniform concentration along an entireheight of the source and drain portions of the fin structure.
 18. Thesemiconductor device of claim 16, wherein the spacer is present on halfa height of the fin structure or less.
 19. The semiconductor device ofclaim 15, wherein the spacer comprises a low-k dielectric material. 20.The semiconductor device of claim 17, wherein the uniform concentrationof said p-type or n-type dopant along the entire height of the sourceand drain portions of the fin structure is present in a concentrationranging from 1×10¹⁹ atoms/cm³ to 1×10¹⁹ atoms/cm³.